2008 .9 11 1/2 semiconductor technical data kdv358 revision no : 1 vco for uhf/vhf band. features h good c-v linearity. h low series resistance. : r s =0.4 ? (max.) h small package : usc. maximum rating (ta=25 ? ) usc dim millimeters a b c d e f g h j k 2.50 0.1 1.25 0.05 0.90 0.05 0.30+0.06/-0.04 1.70 0.05 min 0.17 0.126 0.03 0~0.1 0.15 0.05 0.4 0.05 2 +4/-2 l m 4~6 i 1.0 max cathode mark m m i c j g d 2 1 b 1. anode 2. cathode e k a f h l + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) variable capacitance diode silicon epitaxial planar diode characteristic symbol rating unit reverse voltage v r 15 v junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse current i r1 v r =15v - - 10 na i r2 v r =15v, ta=60 ? - - 100 capacitance c 1v v r =1v, f=1mhz 19.5 - 21.0 pf c 4v v r =4v, f=1mhz 8.0 - 9.3 capacitance ratio c 1v /c 4v - 2.2 - - - series resistance r s v r =1v, f=470mhz - - 0.4 ? marking vj type name lot no.
2008 .9 .11 2/2 revision no : 1 kdv358 10 reverse current i (a) r t 0 reverse voltage v (v) r i - v rr 412 816 total capacitance c (pf) 0 1.0 0.1 reverse voltage v (v) r tr c - v 10 5 10 15 20 25 f=1mhz 30 -1.5 1.0 0.1 reverse voltage v (v) r tr r ? (log c ) / ? (log v ) - v tr ? (log c ) / ? (log v ) 10 -1.0 -0.5 0 s series resistance r ( ? ) 0 1.0 0.1 reverse voltage v (v) r sr r - v 10 f=470mhz 0.4 0.2 0.3 0.1 -12 10 -13 10 -11
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